RF High Power Amplifier, Military Amplifier | Inspower

Feedforward Amplifier | Research and Development - INSPOWER
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        Development
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Research and Development

Our development team is comprised of industry veterans with a minimum of 10 years experience in the microwave field of RF design.

Inspower veterans and experienced designers have the skill and knowledge to quickly and accurately design and produce the most challenging RF and microwave amplifier assemblies, customized to meet specific needs and performance requirements.

Our experienced Development team use design tools and well proven manufacturing techniques combined with the utilization of the latest advanced semiconductor technologies to offer the most up to date solutions to customer requirements.

Inspower development team havethe following key technologies
They freely utilize LDMOS, GaN, MOSFET, GaASFET and bipolar Device
Specially Ultra wide band amplifiertechnology using GaN Device.
Linear Power amplifier using Feed-forward(Feedforward Amplifier), Cross-cancellation and pre-distortion
        technique.
High efficiency Amplifier using Symmetrical and Asymmetrical Doherty Configuration for Digital Pre-Distortion
        Technique.
RF Hybrid IC and Pallet amplifier manufacturing technology